IRF630NSPBF International Rectifier MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC

Part Nnumber

IRF630NSPBF

Description

MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC

Producer

International Rectifier

Basic price

1,76 EUR

The product with part number IRF630NSPBF (MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC) is from company International Rectifier and distributed with basic unit price 1,76 EUR. Minimal order quantity is 1 pc.

International Rectifier Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 9.5 A Vds - Drain-Source Breakdown Voltage: 200 V Rds On - Drain-Source Resistance: 300 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Qg - Gate Charge: 23.3 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 82 W Mounting Style: SMD/SMT Package/Case: D-PAK-3 Packaging: Tube Brand: International Rectifier Channel Mode: Enhancement Configuration: Single Fall Time: 15 ns Minimum Operating Temperature: - 55 C Rise Time: 14 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 27 ns

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(keyword IRF630NSPBF International Rectifier MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC)

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